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| inchange semiconductor isc product specification isc silicon npn power transistor BU1706A description high voltage high speed switching applications designed for use in high frequency electronic lighting ballast applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cesm collector-emitter voltage v be = 0 1750 v v ceo collector-emitter voltage 750 v v ebo emitter-base voltage 12 v i c collector current-continuous 5 a i cm collector current-peak 8 a i b b base current-continuous 3 a i bm base current-peak 5 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU1706A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0; l= 25mh 750 v v ce( sat ) collector-emitter saturation voltage i c = 1.5a; i b = 0.3a 1.0 v v be( sat ) base-emitter saturation voltage i c = 1.5a; i b = 0.3a 1.3 v i ces collector cutoff current v ce = v cesm ; v be = 0 v ce = v cesm ; v be = 0; t c =125 1.0 2.0 ma i ebo emitter cutoff current v eb = 12v; i c = 0 1.0 ma h fe-1 dc current gain i c = 5ma; v ce = 10v 8 h fe-2 dc current gain i c = 400ma; v ce = 3v 12 35 h fe-3 dc current gain i c = 1.5a; v ce = 1v 5 switching times resistive load t on turn-on time 1.5 s t s storage time 6.5 s t f fall time i c = 1.5a; i b1 = -i b2 = 0.3a 1.0 s isc website www.iscsemi.cn |
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